Integrated assemblies and methods of forming integrated assemblies

An integrated assembly, comprising:

• a first memory region, a second memory region offset from the first memory region, and an intermediate region between the first and second memory regions;
• first channel-material-pillars arranged within the first memory region;
• second channel-material-pillars arranged within the second memory region;
• conductive posts arranged within the intermediate region;
• a panel extending across the first memory region, the intermediate region and the second memory region;
• the panel being laterally between a first memory-block-region and a second memory-block-region;
• doped first semiconductor material within the first memory region, the second memory region and the intermediate region, and being directly adjacent the panel;
• the doped first semiconductor material being at least part of conductive source structures within the first and second memory regions;
• and
• rings laterally surrounding lower regions of the conductive posts and being between the conductive posts and the doped first semiconductor material;
• the rings comprising laminates of two or more materials;
• inner regions of the rings being spaced from the conductive posts by intervening regions which include second semiconductor material;
• the doped first semiconductor material directly contacting outer lateral edges of the rings.