Back to results
US 11,910,593 B2Granted
Ground-connected supports with insulating spacers for semiconductor memory capacitors and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYoon Young Choi, Seung Jin Kim, Byung-Hyun Lee, Sang Jae Park
Life of this patent
Estimating the term…
Abstract
A semiconductor device may comprise: a plurality of lower electrodes which are on a substrate; a first electrode support which is between adjacent lower electrodes and comprises a metallic material; a dielectric layer which is on the lower electrodes and the first electrode support to extend along profiles of the first electrode support and each of the lower electrodes; and an upper electrode which is on the dielectric layer.
Claims20
A semiconductor device comprising:
- a plurality of lower electrodes extending vertically from an upper surface of a substrate;
- a first electrode support between adjacent lower electrodes of the plurality of lower electrodes, the first electrode support comprising a conductive material;
- a dielectric layer on the plurality of lower electrodes and the first electrode support and extending along profiles of the first electrode support and each of the plurality of lower electrodes;
- and
- an upper electrode on the dielectric layer and encircling at least one of the plurality of lower electrodes,
- wherein the first electrode support is vertically over a portion of the upper electrode.
3 more elements
A semiconductor device comprising:
- a plurality of lower electrodes on a substrate;
- an electrode support, comprising a conductive material, between adjacent lower electrodes of the plurality of lower electrodes, and comprising a support exposed area on an upper surface of the electrode support;
- a dielectric layer on the electrode support and the lower electrodes but not on the support exposed area of the electrode support;
- an upper electrode on the dielectric layer;
- an upper plate electrode on the upper electrode and electrically connected to the electrode support;
- and
- a ground plug connected to the upper plate electrode.
4 more elements
A semiconductor device comprising:
- a trench in a substrate;
- a gate electrode filling a part of the trench;
- a source/drain region adjacent to the gate electrode and laterally overlapping a part of the gate electrode;
- a contact plug connected to the source/drain region;
- a landing pad on the contact plug;
- an etch stop layer on the landing pad and exposing at least a part of the landing pad;
- a lower electrode connected to the landing pad;
- a first electrode support on sidewalls of the lower electrode and spaced apart from the etch stop layer, the first electrode support comprising an insulating material;
- a second electrode support on the sidewalls of the lower electrode and spaced apart from the first electrode support, the second electrode support comprising a conductive material;
- an insulating spacer electrically isolating the second electrode support from the lower electrode;
- an upper electrode;
- and
- a dielectric layer on the lower electrode, the first electrode support and the second electrode support extending along profiles of the lower electrode, the first electrode support, and the second electrode support such that the dielectric layer is between the upper electrode and the first electrode support, and between the upper electrode and the lower electrode.
10 more elements
Dependencies are inferred from the claim text.