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US 11,910,586 B2Granted
Integrated circuit and static random access memory thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon-Jhy Liaw
Life of this patent
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Abstract
An IC structure comprises a substrate, a first SRAM cell, and a second SRAM cell. The first SRAM cell is formed over the substrate and comprises a first N-type transistor. The second SRAM cell is formed over the substrate and comprises a second N-type transistor. A gate structure of first N-type transistor of the first SRAM cell has a different work function metal composition than a gate structure of the second N-type transistor of the second SRAM cell.
Claims20
A device, comprising:
- a first transistor formed on a first active region within a first well region;
- a second transistor formed on a second active region within a second well region, the second well region forming a PN junction with the first well region;
- and
- a shared gate structure shared by the first transistor and the second transistor, the shared gate structure comprising:
- a first work function film overlapping the first active region;
- a second work function film overlapping the second active region, the second work function film having a different material composition than the first work function film;
- and
- a conductive film overlapping both the first work function film and the second work function film.
5 more elements
A device, comprising:
- a first active region extending along a first direction within a first well region;
- a second active region extending along the first direction within a second well region;
- an isolation region between the first active region and the second active region, the isolation region having a bottom surface in contact with a PN junction between the first well region and the second well region;
- and
- a gate structure continuously extending across the first active region and the second active region along a second direction different from the first direction, the gate structure comprising:
- a first work function film extending across the first active region;
- a second work function film, different from the first work function film, extending across the second active region;
- and
- a metal structure extending across both the first work function film and the second work function film.
6 more elements
A device, comprising:
- a substrate;
- a first SRAM cell formed over the substrate, the first SRAM cell comprising a first N-type transistor having a first gate structure, the first gate structure having a first work function metal layer;
- and
- a second SRAM cell formed over the substrate, the second SRAM cell comprising a second N-type transistor having a second gate structure, the second gate structure having a second work function metal layer,
- wherein the first work function metal layer is a stacked film of a first layer and a second layer, the second work function metal layer is a stacked film of a third layer and a fourth layer, the first layer of the first work function metal layer is thicker than the third layer of the second work function metal layer, and the second layer of the first work function metal layer has a thickness substantially the same as a thickness of the fourth layer of the second work function metal layer.
2 more elements
Dependencies are inferred from the claim text.