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US 11,909,176 B2Granted
Nanocrystal surface-emitting lasers
AssigneeThe Regents of the University of Michigan
InventorsYong-Ho Ra, Roksana Tonny Rashid, Xianhe Liu, Zetian Mi
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Abstract
An all-epitaxial, electrically injected surface-emitting green laser operates in a range of about 520-560 nanometers (nm). At 523 nm, for example, the device exhibits a threshold current density of approximately 0.4 kilo-amperes per square centimeter (kA/cm2), which is over one order of magnitude lower than that of previously reported blue laser diodes.
Claims23
A nanowire, comprising:
- a first semiconductor region;
- a second semiconductor region;
- and
- a heterostructure disposed between and coupled to the first semiconductor region and the second semiconductor region, the heterostructure including;
- a quantum disk disposed in a first semipolar plane of the nanowire;
- and
- a shell layer disposed in a second semipolar plane of the nanowire;
- wherein the nanowire is operable for emitting stimulated emission light having a wavelength in a range of 520-560 nanometers at a current density that is at least an order of magnitude less than ten kiloamperes per square centimeter (10 kA/cm2).
5 more elements
A device, comprising:
- a substrate;
- and
- a surface-emitting laser coupled to the substrate and comprising a nanocrystal array comprising a plurality of nanowires, wherein the plurality of nanowires include;
- an n-type semiconductor region;
- a p-type semiconductor region;
- and
- a heterostructure between the n-type semiconductor region and the p-type semiconductor region, the heterostructure includes;
- a quantum disk disposed in a first semipolar plane of the nanowire;
- and
- a shell layer disposed in a second semipolar plane of the nanowire.
7 more elements
A monolithic device, comprising:
- a substrate layer;
- and
- a plurality of nanowires coupled to the substrate layer, wherein the plurality of nanowires include;
- a heterostructure including a quantum disk disposed in a first semipolar plane of the nanowire, and a shell layer disposed in a second semipolar plane of the nanowire.
1 more element
Dependencies are inferred from the claim text.