Light emitting device and electronic device

A light emitting device comprising:

• a first layer comprising an organic resin;
• a second layer comprising an organic resin;
• and
• a transistor and a light emitting element electrically connected to the transistor, the transistor and the light emitting element being sealed between the first layer and the second layer,
• wherein a channel formation region of the transistor comprises a semiconductor layer,
• wherein the semiconductor layer has a thickness of greater than or equal to 20 nm and less than or equal to 70 nm,
• wherein the semiconductor layer and an electrode of the light emitting element are electrically connected to each other via a first conductive layer and a second conductive layer,
• wherein the first conductive layer is configured to function as one of a source electrode and a drain electrode of the transistor,
• wherein a third conductive layer overlaps with the channel formation region of the transistor,
• wherein the second conductive layer and the third conductive layer comprise a same material, and
• wherein at least one of the first layer and the second layer has a thickness of greater than or equal to 3 μm and less than or equal to 15 μm.

A light emitting device comprising:

• a first layer comprising an organic resin;
• a second layer comprising an organic resin;
• a transistor and a light emitting element electrically connected to the transistor, the transistor and the light emitting element being sealed between the first layer and the second layer;
• and
• a film having elasticity provided over a surface of the first layer which faces away from the transistor,
• wherein a channel formation region of the transistor comprises a semiconductor layer,
• wherein the semiconductor layer and an electrode of the light emitting element are electrically connected to each other via a first conductive layer and a second conductive layer,
• wherein the first conductive layer is configured to function as one of a source electrode and a drain electrode of the transistor,
• wherein the first conductive layer comprises a region in contact with the semiconductor layer,
• wherein a third conductive layer overlaps with the channel formation region of the transistor,
• wherein the second conductive layer comprises a region in contact with the first conductive layer and a region in contact with the electrode of the light emitting element, and
• wherein the second conductive layer and the third conductive layer comprise a same material.