Light emitting diodes containing deactivated regions and methods of making the same

A method of forming a light emitting diode (LED), comprising:

• forming n-doped semiconductor material layer;
• forming an active region including an optically active compound semiconductor layer stack configured to emit light on the n-doped semiconductor material layer;
• forming a p-doped semiconductor material layer on the active region;
• deactivating a physically exposed portion of the p-doped semiconductor material layer with a plasma treatment to form an inactive region while an electrically active region remains in the p-doped semiconductor material that is not subjected to the plasma during the plasma treatment;
• forming an anode contact on the p-doped semiconductor material layer;
• forming a reflector overlying and electrically connected to the anode contact;
• and
• forming a device-side bonding pad layer on the reflector,
• wherein an electrical conductivity of the inactive region is less than 30% of the electrical conductivity of the electrically active region.

A method of forming a light emitting diode (LED), comprising:

• forming n-doped semiconductor material layer;
• forming an active region including an optically active compound semiconductor layer stack configured to emit light on the n-doped semiconductor material layer;
• forming a p-doped semiconductor material layer on the active region;
• deactivating a physically exposed portion of the p-doped semiconductor material layer with a plasma treatment to form an inactive region while an electrically active region remains in the p-doped semiconductor material that is not subjected to the plasma during the plasma treatment;
• forming an anode contact on the p-doped semiconductor material layer;
• forming a reflector overlying and electrically connected to the anode contact;
• and
• forming a device-side bonding pad layer on the reflector,
• wherein the inactive region has a crystalline defect density that is at least ten times a crystalline defect density of the electrically active region.

A method of forming a light emitting diode (LED), comprising:

• forming n-doped semiconductor material layer;
• forming an active region including an optically active compound semiconductor layer stack configured to emit light on the n-doped semiconductor material layer;
• forming a p-doped semiconductor material layer on the active region;
• deactivating a physically exposed portion of the p-doped semiconductor material layer with a plasma treatment to form an inactive region while an electrically active region remains in the p-doped semiconductor material that is not subjected to the plasma during the plasma treatment;
• forming an anode contact on the p-doped semiconductor material layer;
• forming a reflector overlying and electrically connected to the anode contact;
• and
• forming a device-side bonding pad layer on the reflector,
• wherein deactivating the physically exposed portion of the p-doped semiconductor material layer with the plasma treatment occurs after forming the anode contact, such that the inactive region is exposed by the anode contact while the electrically active region is covered by the anode contact and is not subjected to the plasma during the plasma treatment.