Light-emitting device

A light-emitting device, comprising:

• a first type semiconductor layer;
• a second type semiconductor layer;
• an active layer disposed between said first type semiconductor layer and said second type semiconductor layer;
• a current blocking layer that is disposed on said first type semiconductor layer to expose a portion of said first type semiconductor layer, said current blocking layer including a first strip portion;
• and
• a first electrode that is disposed on said current blocking layer and that includes a first electrode pad, a first electrode end portion distal from said first electrode pad, and a first electrode extension portion extending between said first electrode pad and said first electrode end portion,
• wherein said first strip portion of said current blocking layer is located beneath said first electrode extension portion and has a widened section having a width that gradually increases in a direction away from said first electrode pad,
• wherein said first strip portion of said current blocking layer further includes a pad-proximal section that is connected to said widened section and that is more proximal to said first electrode pad than said widened section, said pad-proximal section having a width W3 larger than a width W1 of a part of said first electrode extension portion positioned there above, said widened section having a width W4 lamer than a width W2 of a part of said first electrode extension portion positioned there above, a first width difference between the width W3 and the width W1 being less than a second width difference between the width W4 and the width W2, and
• wherein said second type semiconductor layer has a portion exposed from said first type semiconductor layer and said active layer, said light-emitting device further including a transparent conductive layer that is disposed on said exposed portion of said first type semiconductor layer and that is partially disposed between said current blocking layer and said first electrode;
• and a second electrode disposed on said exposed portion of said second type semiconductor layer.