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US 11,908,952 B2Granted
Semiconductor devices and manufacturing methods thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsJung Gil Yang, Woo Seok Park, Dong Chan Suh, Seung Min Song, Geum Jong Bae, Dong Il Bae
Life of this patent
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Abstract
A semiconductor device includes a substrate, a plurality of channel layers stacked on the substrate, a gate electrode surrounding the plurality of channel layers, and embedded source/drain layers on opposing sides of the gate electrode. The embedded source/drain layers each have a first region and a second region on the first region. The second region has a plurality of layers having different compositions.
Claims18
A semiconductor device, comprising:
- a substrate;
- a channel on the substrate;
- a gate electrode extending on the channel;
- and
- source/drain structures in recess regions on opposing sides of the gate electrode, the source/drain structures each comprising a first epitaxial layer and a second epitaxial layer on the first epitaxial layer,
- wherein the second epitaxial layer is in a center region of each of the source/drain structures,
- wherein the first epitaxial layer surrounds a bottom surface and both side surfaces of the second epitaxial layer,
- wherein the side surfaces of the second epitaxial layer each comprise first portions that are inclined so that a width of the second epitaxial layer decreases toward the substrate,
- wherein the second epitaxial layer fills more than half of each of the recess regions and comprises a recess portion in an upper surface thereof, and
- wherein the second epitaxial layer has a first length in a first direction perpendicular to an upper surface of the substrate and has a second length, smaller than the first length, in a second direction perpendicular to the first direction.
7 more elements
A semiconductor device, comprising:
- a substrate;
- a channel on the substrate;
- a gate electrode on the channel, the gate electrode extending in a first direction;
- source/drain structures on opposing sides of the gate electrode, the source/drain structures each comprising a first epitaxial layer, a second epitaxial layer on the first epitaxial layer, and a third epitaxial layer on the second epitaxial layer;
- and
- spacers on side surfaces of the gate electrode, the spacers being in contact with the third epitaxial layer,
- wherein the first epitaxial layer surrounds a bottom surface and side surfaces of the second epitaxial layer,
- wherein the side surfaces of the second epitaxial layer comprise first portions that are inclined so that a width of the second epitaxial layer decreases toward the substrate, second portions that are curved downwardly from upper portions of the first epitaxial layer and are connected to upper ends of the first portions, third portions curved from lower ends of the first portions,
- wherein a first width of the second epitaxial layer between the second portions is greater than a second width of a portion of the first epitaxial layer contacting the first portions of the second epitaxial layer on each of the side surfaces of the second epitaxial layer,
- wherein at least one of the source/drain structures comprises an upper portion having a convex shape protruding upwardly to a level higher than an upper surface of the channel,
- wherein the at least one of the source/drain structures comprises a middle portion below the upper portion,
- wherein a width of the upper portion in a second direction perpendicular to the first direction is smaller than a width of the middle portion in the second direction,
- wherein the third epitaxial layer comprises a convex upper surface.
10 more elements
A semiconductor device, comprising:
- a substrate;
- a channel on the substrate;
- a gate electrode on the channel;
- and
- source/drain structures on opposing sides of the gate electrode, the source/drain structures each comprising a first epitaxial layer and a second epitaxial layer having different compositions from each other,
- wherein the second epitaxial layer is in a center region of each of the source/drain structures,
- wherein the first epitaxial layer surrounds a bottom surface and both side surfaces of the second epitaxial layer,
- wherein the side surfaces of the second epitaxial layer each comprise first portions that are inclined so that a width of the second epitaxial layer decreases toward the substrate and second portions that are curved downwardly from upper portions of the first epitaxial layer and are connected to upper ends of the first portions, and
- wherein the first epitaxial layer comprises outer side surfaces having substantially vertical portions.
6 more elements
Dependencies are inferred from the claim text.