TFT substrate and light emitting display device including the same
AssigneeLG Display Co., Ltd.
InventorKum-Mi Oh
Life of this patent
Estimating the term…
Abstract
A thin film transistor (TFT) substrate comprises a TFT located on a substrate and including a gate electrode, a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer, the gate electrode and the second semiconductor layer vertically stacked, and the first and second semiconductor layers are made of polycrystalline silicon, and wherein the first and second semiconductor layers are electrically connected to each other in series and respectively include first and second channel portions, and at least one of the first and second channel portions has a bent structure in a plan view.
Claims17
A display device, comprising:
- a thin film transistor (TFT) substrate that has a TFT including a gate electrode, a first semiconductor layer and a second semiconductor layer;
- a first electrode connected to the TFT;
- and
- wherein the first semiconductor layer, the gate electrode and the second semiconductor layer vertically stacked, and the first and second semiconductor layers are made of polycrystalline silicon, and
- wherein the first and second semiconductor layers are electrically connected to each other in series and respectively include first and second channel portions, and at least one of the first and second channel portions has a bent structure in a plan view,
- wherein the TFT further comprises:
- a first gate insulating layer between the first semiconductor layer and the gat electrode;
- a second gate insulating layer between the second semiconductor layer and the gate electrode and on the first gate insulating layer;
- a passivation layer on the second semiconductor layer;
- and
- a connection electrode on the passivation layer,
- wherein the connection electrode contacts one of a source portion and a drain portion of the second semiconductor layer and the other of a source portion and a drain portion of the first semiconductor layer through a contact hole in the passivation layer and the first and second gate insulating layers, and
- wherein a length of a connection path of the one of the source portion and the drain portion of the second semiconductor layer and the other of the source portion and the drain portion of the first semiconductor layer is equal to a distance between the one of the source portion and the drain portion of the second semiconductor layer and the other of the source portion and the drain portion of the first semiconductor layer.
A thin film transistor (TFT) substrate, comprising:
- a TFT located on a substrate and including a gate electrode, a first semiconductor layer and a second semiconductor layer, the first semiconductor layer, the gate electrode and the second semiconductor layer vertically stacked, and the first and second semiconductor layers made of polycrystalline silicon,
- wherein the first and second semiconductor layers are electrically connected in series to each other, and respectively include first and second channel portions, and
- wherein the first channel portion includes a first channel part extending in a first direction, and a second channel part extending in a second direction different from the first direction,
- wherein the second channel portion includes a third channel part extending in the first direction and vertically overlapping the first channel part, a fourth channel part extending in a direction different from the first direction and the second direction and not overlapping the second channel part, and the first and third channel parts have a same channel length.
Dependencies are inferred from the claim text.