Charge-transfer spacers for stacked nanoribbon 2D transistors

A method of forming a semiconductor device, comprising:

• forming a stack of first layers and second layers in an alternating pattern over a substrate;
• forming a recesses into a first end and a second end of the stack to expose the substrate;
• laterally recessing the second layers at the first end and the second to form lateral recesses;
• filling the lateral recesses to form a first spacer at the first end and a second spacer at the second end;
• removing the first layers;
• forming two-dimensional (2D) semiconductor sheets between the second layers, the first spacer, and the second spacer;
• filling a space between pairs of the 2D semiconductor sheets with a gate electrode;
• forming a source contact adjacent to a first end of the 2D semiconductor sheets;
• and
• forming a drain contact adjacent to a second end of the 2D semiconductor sheets.

An electronic system, comprising:

• a board;
• an electronic package coupled to the board;
• and
• a die electrically coupled to the electronic package, wherein the die comprises:
• a stack of two-dimensional (2D) semiconductor sheets, wherein individual ones of the 2D semiconductor sheets have a first end and a second end opposite from the first end;
• a first spacer over the first end of the 2D semiconductor sheets;
• a second spacer over the second end of the 2D semiconductor sheets;
• a gate electrode between the first spacer and the second spacer, wherein the gate electrode is between pairs of the 2D semiconductor sheets;
• a source contact adjacent to the first end of the 2D semiconductor sheets;
• and
• a drain contact adjacent to the second end of the 2D semiconductor sheets.

A semiconductor device, comprising:

• a stack of two-dimensional (2D) semiconductor sheets, wherein individual ones of the 2D semiconductor sheets have a first end and a second end opposite from the first end;
• a first spacer over the first end of the 2D semiconductor sheets;
• a second spacer over the second end of the 2D semiconductor sheets, wherein the first end of the 2D semiconductor sheet is substantially coplanar with a surface of the first spacer, and wherein the second end of the 2D semiconductor sheet is substantially coplanar with a surface of the second spacer;
• a gate electrode between the first spacer and the second spacer;
• a source contact adjacent to the first end of the 2D semiconductor sheets;
• and
• a drain contact adjacent to the second end of the 2D semiconductor sheets.

A semiconductor device, comprising:

• a stack of two-dimensional (2D) semiconductor sheets, wherein individual ones of the 2D semiconductor sheets have a first end and a second end opposite from the first end;
• a first spacer over the first end of the 2D semiconductor sheets;
• a second spacer over the second end of the 2D semiconductor sheets, wherein a surface of the first spacer is recessed from the first end of the 2D semiconductor sheet, and wherein a surface of the second spacer is recessed from the second end of the 2D semiconductor sheet;
• a gate electrode between the first spacer and the second spacer;
• a source contact adjacent to the first end of the 2D semiconductor sheets;
• and
• a drain contact adjacent to the second end of the 2D semiconductor sheets.

A semiconductor device, comprising:

• a stack of two-dimensional (2D) semiconductor sheets, wherein individual ones of the 2D semiconductor sheets have a first end and a second end opposite from the first end, wherein a bottommost 2D semiconductor sheet comprises protrusions that extend below the source contact and the drain contact, and, wherein an insulating layer is disposed over the protrusions;
• a first spacer over the first end of the 2D semiconductor sheets;
• a second spacer over the second end of the 2D semiconductor sheets;
• a gate electrode between the first spacer and the second spacer;
• a source contact adjacent to the first end of the 2D semiconductor sheets;
• and
• a drain contact adjacent to the second end of the 2D semiconductor sheets.

A semiconductor device, comprising:

• a stack of two-dimensional (2D) semiconductor sheets, wherein individual ones of the 2D semiconductor sheets have a first end and a second end opposite from the first end;
• a first spacer over the first end of the 2D semiconductor sheets;
• a second spacer over the second end of the 2D semiconductor sheets, wherein the first spacer and the second spacer are charge-transfer materials;
• a gate electrode between the first spacer and the second spacer;
• a source contact adjacent to the first end of the 2D semiconductor sheets;
• and
• a drain contact adjacent to the second end of the 2D semiconductor sheets.