FinFET transistor

A semiconductor device, comprising:

• a semiconductor substrate having isolation regions formed therein;
• a fin-shaped semiconductor structure protruding vertically above the isolation regions and extending laterally in a first direction, wherein the fin-shaped semiconductor structure forms a continuous extension of a bulk semiconductor substrate without having a buried oxide layer below the fin-shaped semiconductor structure;
• and
• a gate dielectric directly overlying a channel region of the fin-shaped semiconductor structure and a gate electrode directly overlying the gate dielectric, the channel region being interposed in the first direction between a source region and a drain region,
• wherein the channel region has sloped sidewalls and a width that continuously decreases from a base towards a peak of the channel region,
• wherein the channel region comprises an undoped volume inversion region having a height greater than about 25% of a total height of the channel region, and
• wherein the volume inversion region comprises a region in which, under an inversion condition, surface depletion regions extending from the opposing sloped sidewalls overlap,
• wherein the volume inversion region includes an undoped region.

A semiconductor device, comprising:

• a semiconductor substrate having isolation regions formed therein;
• a fin structure disposed over the semiconductor substrate protruding vertically above the isolation regions and extending laterally in a first direction;
• and
• a gate structure disposed over the fin structure, the gate structure including a gate electrode and a gate dielectric;
• wherein the fin structure includes a channel region between a source region and a drain region,
• wherein the channel region comprises an undoped volume inversion region,
• wherein the total height of the channel region does not exceed 34 nm.