Method of making a FinFET device including a step of recessing a subset of the fins

A method comprising:

• forming a plurality of first fins in a first area and a plurality of second fins in a second area, wherein each first fin from the plurality of first fins includes a semiconductor material layer;
• forming a dielectric layer over the plurality of first fins in the first area and the plurality of second fins in the second area, wherein the dielectric layer covers the plurality of first fins and the plurality of second fins;
• removing a first portion of the dielectric layer in the first area, wherein a second portion of the dielectric layer remains in the second area;
• and
• removing at least a portion of the semiconductor material layer from each of the plurality of first fins to form a plurality of semiconductor protrusions, wherein the plurality of semiconductor protrusions are shorter than the plurality of second fins, wherein the plurality of semiconductor protrusions physically contact the dielectric layer.

A method comprising:

• forming a first fin and a second fin on a substrate, the first fin being covered by a first hard mask layer;
• forming a dielectric layer over the first fin and the second fin such that the dielectric layer covers the first fin and the second fin;
• removing a first portion of the dielectric layer to expose the first hard mask layer, wherein the dielectric layer covers the second fin after the removing of the first portion of the dielectric layer, wherein the removing of the first portion of the dielectric layer to expose the first hard mask layer includes forming a trench in the dielectric layer that expose a first portion of the first fin while a second portion of the first fin is covered by a second portion of the dielectric layer;
• and
• after removing the first portion of the dielectric layer, removing at least a portion of the first fin.