Substrate processing liquid for etching a metal layer, substrate processing method and substrate processing apparatus
AssigneeSCREEN Holdings Co., Ltd.
InventorsDai Ueda, Yosuke Hanawa
Life of this patent
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Abstract
A substrate processing liquid is used to etch a substrate in which at least either a bottom wall or a side wall forming a trench structure is an etched layer made of metal or a metal compound. The substrate processing liquid includes a chemical liquid containing H2O2 molecules or HO2− functioning as an etchant for etching the metal, and a complex forming agent containing NH4+ and forming a complex with ions of the metal and is adjusted to a pH of 5 or more.
Claims13
A substrate processing liquid for removing an etched layer by being supplied to a substrate having a trench structure in which a narrow space is formed by an opening having a narrow width, a bottom wall facing the opening and one or more side walls extending toward the opening and at least either the bottom wall or the side wall is formed by the etched layer made of metal or a metal compound, the liquid comprising:
- a chemical liquid containing H2O2 molecules or HO2+ functioning as an etchant for etching the metal;
- and
- a complex forming agent containing NH4+ and forming a complex with ions of the metal, wherein
- a pH is adjusted to a value that is equal to or more than 8 but no more than 9.
A substrate processing method, comprising:
- removing an etched layer by supplying a substrate processing liquid to a substrate having a trench structure in which a narrow space is formed by an opening having a narrow width, a bottom wall facing the opening and one or more side walls extending toward the opening and at least either the bottom wall or the side wall is formed by the etched layer made of metal or a metal compound;
- and
- stopping the removal of the etched layer by removing the substrate processing liquid from the substrate, wherein:
- the substrate processing liquid includes a chemical liquid containing H2O2 molecules or HO2− functioning as an etchant for etching the metal and a complex forming agent containing NH4+ and forming a complex with ions of the metal;
- and
- the substrate processing liquid is adjusted to a pH value that is equal to or more than 8 but no more than 9.
A substrate processing apparatus, comprising:
- a substrate holder that holds a substrate having a trench structure in which a narrow space is formed by an opening having a narrow width, a bottom wall facing the opening and one or more side walls extending toward the opening and at least either the bottom wall or the side wall is formed by an etched layer made of metal or a metal compound;
- and
- a processing liquid supplier that supplies a substrate processing liquid to the substrate held by the substrate holder, wherein:
- the substrate processing liquid includes a chemical liquid containing H2O2 molecules or HO2− functioning as an etchant for etching the metal and a complex forming agent containing NH4+ and forming a complex with ions of the metal;
- and
- the substrate processing liquid is adjusted to a pH value that is equal to or more than 8 but no more than 9.
Dependencies are inferred from the claim text.