US 11,908,933 B2 · Designs for silicon carbide MOSFETs

Abstract

A metal-oxide-semiconductor field-effect transistor (MOSFET) device is described herein. The MOSFET device comprises a unit cell on a silicon carbide (SiC) substrate. The unit cell comprises: a source region; a well region; and a source attachment region. The source attachment region is in contact with the source region. The source attachment region is doped using first conductivity type ions. In an embodiment, the source attachment region is doped using second conductivity type ions. The source attachment region comprises a depth shallower than a depth of source region. In an embodiment, the source attachment region comprises a depth equal to a depth of the source region. The source attachment region comprises a doping concentration lower than a doping concentration of the source region. In an embodiment, the source attachment region comprises a doping concentration equal to a doping concentration of the source region.

Claims20

Dependent claims

A metal-oxide-semiconductor field-effect transistor (MOSFET) device comprising a unit cell on a silicon carbide (SiC) substrate, the unit cell comprising:

a source region;
a well region;
a source attachment region;
a gate oxide layer;
and
a gate metal layer,
wherein the source attachment region is in direct contact with the source region,
wherein the gate metal layer completely overlaps with the source attachment region,
wherein the gate oxide layer extends beyond a lateral edge of the gate metal layer, and
wherein the source attachment region comprises a doping concentration lower than a doping concentration of the source region.

7 more elements

Dependencies are inferred from the claim text.

Designs for silicon carbide MOSFETs

Life of this patent

Designs for silicon carbide MOSFETs

Life of this patent

Abstract

Claims20