Back to results
US 11,908,917 B2Granted
Gate structures
AssigneeGlobalfoundries Inc.
InventorsJiehui Shu, Sipeng Gu, Haiting Wang
Life of this patent
Estimating the term…
Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to gate structures and methods of manufacture. The method includes: forming a first gate structure and a second gate structure with gate materials; etching the gate materials within the second gate structure to form a trench; and depositing a conductive material within the trench so that the second gate structure has a metal composition different than the first gate structure.
Claims18
A structure, comprising:
- a first gate structure, a second gate structure, and a third gate structure, the second gate structure being positioned between and abutting the first gate structure and the third gate structure;
- and
- conductive materials in the first, second, and third gate structures, the conductive materials of the second gate structure being different than the first gate structure and the third gate structure,
- wherein the conductive materials comprise different materials from the first gate structure, the second gate structure, and the third gate structure, the conductive materials of the first gate structure and the third gate structure are over device regions, and the second gate structure is formed over a non-device region.
1 more element
A structure, comprising:
- a first gate structure, a second gate structure, and a third gate structure, the second gate structure being positioned between and abutting the first gate structure and the third gate structure;
- and
- conductive materials in the first, second, and third gate structures, the conductive materials of the second gate structure being different than the first gate structure and the third gate structure,
- wherein the second gate structure comprise gate materials with different thicknesses than the gate materials of the first and third gate structure and wherein the conductive materials of the first gate structure and the third gate structure are over device regions, and the second gate structure is formed over a non-device region.
1 more element
Dependencies are inferred from the claim text.