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US 11,908,913 B2Granted
Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices
AssigneeMicron Technology, Inc.
InventorsDurai Vishak Nirmal Ramaswamy, Ramanathan Gandhi, Scott E. Sills
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Abstract
A semiconductor device is disclosed. The semiconductor device includes a transistor including a source contact, a drain contact, and a channel region including an oxide semiconductor material as the channel material. At least one of the drain contact or the source contact includes a conductive material, such as ruthenium, to reduce the Schottky effects at the interface with the channel material.
Claims20
A semiconductor device, comprising:
- a transistor comprising:
- a channel comprising oxide semiconductor material;
- a first contact vertically overlying the channel and comprising one or more of ruthenium and ruthenium oxide;
- a second contact vertically underlying the channel and comprising one or more of ruthenium and ruthenium oxide;
- a gate electrode horizontally neighboring the channel in a first direction and confined within vertical boundaries of the channel;
- and
- a gate dielectric material horizontally extending from and between the channel and the gate electrode in the first direction and vertically extending from and between the first contact and the second contact, the gate dielectric material substantially horizontally overlapping the first contact and the second contact in the first direction;
- a first conductive line vertically overlying and in direct physical contact with the first contact, the first conductive line comprising one or more of titanium nitride and tungsten;
- and
- a second conductive line vertically underlying and in direct physical contact with the second contact, the second conductive line comprising one or more of titanium nitride and tungsten.
7 more elements
A semiconductor device, comprising:
- a vertically oriented transistor comprising:
- a drain contact comprising ruthenium;
- a source contact comprising additional ruthenium;
- a channel region vertically interposed between drain contact and the source contact and comprising oxide semiconductor material;
- a gate electrode horizontally neighboring the channel region and vertically interposed between drain contact and the source contact;
- and
- a gate dielectric material horizontally interposed between the channel region and the gate electrode and vertically interposed between drain contact and the source contact, the gate dielectric material substantially confined within horizontal areas of the drain contact and the source contact;
- a data line in electrical communication with the drain contact of the vertically oriented transistor;
- a drain line comprising conductive material including one or more of tungsten and titanium nitride;
- and
- a source line in electrical communication with the source contact of the vertically oriented transistor, the source line comprising additional conductive material.
8 more elements
A semiconductor device, comprising:
- a transistor comprising:
- a channel comprising oxide semiconductor material;
- a drain contact vertically adjacent a first end of the channel and comprising ruthenium;
- a source contact vertically adjacent a second end of the channel and comprising additional ruthenium;
- a gate electrode horizontally neighboring the channel and vertically interposed between drain contact and the source contact;
- and
- a gate dielectric material horizontally extending from and between the channel and the gate electrode, the gate dielectric material substantially confined within a horizontal area of each of the drain contact and source contact and vertically extending from a vertical boundary of the drain contact to a vertical boundary of the source contact;
- a data line in physical contact with the ruthenium of the drain contact of the transistor, the data line comprising one or more of tungsten and titanium nitride;
- and
- a source line in physical contact with the additional ruthenium of the source contact of the transistor.
7 more elements
Dependencies are inferred from the claim text.