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US 11,908,910 B2Granted
Semiconductor device having embedded conductive line and method of fabricating thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Chuan Yang, Jing-Yi Lin, Hsin-Wen Su, Shih-Hao Lin
Life of this patent
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Abstract
Methods and devices that provide a first fin structure, a second fin structure, and a third fin structure disposed over a substrate. A dielectric fin is formed between the first fin structure and the second fin structure, and a conductive line is formed between the second fin structure and the third fin structure.
Claims20
A semiconductor device, comprising:
- a first fin structure, a second fin structure, and a third fin structure extending from a substrate;
- a first source/drain feature over the first fin structure;
- a second source/drain feature over the second fin structure;
- a third source/drain feature over the third fin structure;
- a dielectric separation structure extending between the first source/drain feature and the second source/drain feature;
- a conductive line between the second source/drain feature and the third source/drain feature:
- and
- a metal gate structure over at least two of the first, second and third fin structures, wherein the metal gate structure extends over the conductive line.
5 more elements
A semiconductor device, comprising:
- a memory cell having a first transistor and a second transistor;
- a first source/drain feature of the first transistor formed over a recessed first fin structure, a second source/drain feature of the second transistor formed over a recessed second fin structure;
- and
- a power line disposed between the first source/drain feature and the second source/drain feature:, a dummy region having a first dummy gate and a second dummy gate connected to the first dummy gate;
- and
- another power line disposed between the first dummy gate and the second dummy gate.
3 more elements
A method, comprising:
- providing a first fin structure, a second fin structure, and a third fin structure disposed over a substrate;
- forming a dielectric fin between the first fin structure and the second fin structure;
- forming a conductive line between the second fin structure and the third fin structure;
- forming a gate structure extending over the second fin structure, the conductive line and the third fin structure;
- recessing a source/drain region of each of the first, second and third fin structures;
- and
- epitaxially growing a first, second and third source/drain feature on the first, second, and third fin structures respectively.
4 more elements
Dependencies are inferred from the claim text.