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US 11,908,907 B2Granted
VFET contact formation
AssigneeInternational Business Machines Corporation
InventorsHeng Wu, Ruilong Xie, Tian Shen, Kai Zhao
Life of this patent
Estimating the term…
Abstract
An embodiment of the invention may include a Vertical Field Effect Transistor (VFET) structure, and method of making that structure, having a first VFET and a second VFET. The first VFET may include a single liner between a first source/drain epi and a contact. The second VFET may include two liners between a second source/drain epi and a contact. This may enable proper contact liner matching for differing VFET devices.
Claims23
A semiconductor device comprising:
- a first Vertical Field Effect Transistor (VFET) comprising a first top source drain epi, a first silicide, a first contact liner and a first contact each arranged in direct contact one on top of another, wherein the first silicide consists of elements of the first top source drain epi and the first contact liner;
- and
- a second VFET comprising a second top source drain epi, a second silicide, a metal contact, a second contact liner and a second contact, wherein the second silicide consists of elements of the second top source drain epi and the metal contact,
- wherein the metal contact is physically arranged between the second silicide from the second contact liner, and wherein a bottommost surface of the metal contact is entirely below a topmost surface of the second silicide, and wherein a bottommost surface of the first contact liner directly contacts a top surface of the first silicide, and wherein the first contact liner and the second contact liner comprise identical elements.
1 more element
A semiconductor device comprising:
- a first Vertical Field Effect Transistor (VFET) comprising a first top source drain epi, a first silicide, a first contact liner and a first contact, wherein the first silicide comprises elements of the first top source drain epi and the first contact liner;
- and
- a second VFET comprising a second top source drain epi, a second silicide, a metal contact, a second contact liner and a second contact, wherein the second silicide comprises elements of the second top source drain epi and the metal contact,
- wherein a bottommost surface of the second liner is entirely above a topmost surface of the metal contact, and wherein a bottommost surface of the first contact liner directly contacts a top surface of the first silicide, and wherein the first contact liner and the second contact liner comprise identical elements.
1 more element
A semiconductor device comprising:
- a first Vertical Field Effect Transistor (VFET) comprising a first top source drain epi, a first silicide, a first contact liner and a first contact each arranged one on top of another, wherein the first contact is directly on the first contact liner, the first contact liner is directly on the first silicide, and the first silicide is directly on the first top source drain epi;
- and
- a second VFET comprising a second top source drain epi, a second silicide, a metal contact, a second contact liner and a second contact each arranged one on top of another, wherein the second contact is directly on the second contact liner, the second contact liner is directly on the metal contact, the metal contact is directly on the second silicide, and the second silicide is directly on the first top source drain epi,
- wherein the first contact liner and the second contact liner comprise identical elements.
1 more element
Dependencies are inferred from the claim text.