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US 11,908,893 B2Granted
Semiconductor device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Yi Lee, Cheng-Lung Hung, Chi On Chui
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Abstract
A semiconductor device includes source and drain regions, a channel region between the source and drain regions, and a gate structure over the channel region. The gate structure includes a gate dielectric over the channel region, a work function metal layer over the gate dielectric and comprising iodine, and a fill metal over the work function metal layer.
Claims20
A semiconductor device comprising:
- source and drain regions;
- a channel region between the source and drain regions;
- and
- a gate structure over the channel region and comprising:
- a gate dielectric over the channel region;
- a work function metal layer over the gate dielectric and comprising iodine, wherein the work function metal layer has an oxygen concentration in a range from about 10 at % to about 30 at % throughout the work function metal layer;
- and
- a fill metal over the work function metal layer.
5 more elements
A semiconductor device comprising:
- source and drain regions;
- a channel region between the source and drain regions;
- and
- a gate structure over the channel region and comprising:
- a gate dielectric over the channel region and comprising iodine;
- a first work function metal layer over the gate dielectric;
- and
- a fill metal over the first work function metal layer.
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A method comprising:
- depositing a gate dielectric over a channel region;
- depositing a P-type work function metal layer over the gate dielectric, wherein depositing the P-type work function metal layer is performed using a precursor, and the precursor comprises iodine, and wherein depositing the P-type work function metal layer is performed such that at least a portion of the iodine diffuses into the gate dielectric;
- and
- depositing a fill metal over the P-type work function metal layer.
1 more element
Dependencies are inferred from the claim text.