Method of manufacturing semiconductor devices and a semiconductor device

A semiconductor device comprising:

• a semiconductor substrate;
• a first first-conductive type fin structure protruding from the semiconductor substrate;
• a second first-conductive type fin structure protruding from the semiconductor substrate;
• a first gate structure covering first channel regions of the first and second first-conductive type fin structures, the first channel regions being above an isolation insulating layer;
• a first second-conductive type fin structure protruding from the semiconductor substrate;
• a second second-conductive type fin structure protruding from the semiconductor substrate;
• a second gate structure covering second channel regions of the first and second second-conductive type fin structures, the second channel regions being above the isolation insulating layer;
• and
• a carbon barrier region disposed at a region of the semiconductor substrate between the second first-conductive type fin structure and the first second-conductive type fin structure
• wherein the carbon barrier region extends to a bottom of each of the second first-conductive type fin structure and the first second-conductive type fin structure.

A semiconductor device including a static random access memory (SRAM), the SRAM comprising:

• an n-channel fin field effect transistor (FinFET) having a first fin structure disposed over a semiconductor substrate;
• a p-channel FinFET having a second fin structure disposed over the substrate;
• a p-type well formed in the semiconductor substrate;
• an n-type well formed in the semiconductor substrate;
• and
• a carbon barrier region disposed at a boundary region in the semiconductor substrate between the p-type well and the n-type well,
• wherein a bottom of each of the first and second fin structures includes carbon in an amount of 1×1018 atoms·cm−3 to 2×1019 atoms·cm−3.