Semiconductor device having fin structure

A method for forming a transistor structure, comprising:

• forming a fin structure protruding from a substrate;
• disposing a first conductive line, a second conductive line, a third conductive line and a fourth conductive line along a direction perpendicular to the fin structure to wrap a first predetermined region, a first source region, a gate region and a first drain region of the fin structure, respectively;
• and
• disposing a first conductive rail in a same layer as the first conductive line and one of the second conductive line and the fourth conductive line, wherein the first conductive rail extends in a direction parallel to the fin structure to be laterally contacted by the first conductive line and the one of the second conductive line and the fourth conductive line.

A method for forming a semiconductor device, comprising:

• forming a fin structure protruding from a substrate of the semiconductor device;
• forming a first conductive line on the substrate along a first direction to wrap a first portion of the fin structure;
• forming a second conductive line on the substrate along the first direction to contact a second portion of the fin structure different from the first portion;
• disposing a first conductive rail along a second direction different from the first direction to be laterally contacted by one end of the first conductive line and a portion of one end of the second conductive line;
• and
• disposing a second conductive rail along the second direction to be laterally contacted by another portion of the one end of the second conductive line.