Semiconductor package and method of manufacturing semiconductor package

A method of forming a semiconductor package, the method comprising:

• bonding a first die to a second die, wherein the first die comprises a plurality of first bonding pads, wherein the second die comprises a plurality of second bonding pads bonded to corresponding ones the plurality of first bonding pads;
• after bonding the first die to the second die, forming an isolation layer on a side of the second die opposite the first die;
• after forming the isolation layer, forming a plurality of alignment marks in the isolation layer on the second die;
• and
• forming a redistribution structure over the isolation layer.

A method of forming a semiconductor package, the method comprising:

• bonding a first die to a second die, wherein the first die comprises a plurality of first bonding pads, wherein the second die comprises a plurality of second bonding pads bonded to corresponding ones the plurality of first bonding pads, wherein the second die comprises a plurality of through vias electrically connected to corresponding ones of the plurality of second bonding pads;
• forming an encapsulating material over the first die, wherein the encapsulating material laterally encapsulates the second die;
• recessing a surface of the second die to below an upper surface of the encapsulating material to form a recess;
• forming an isolation layer in the recess on the second die;
• forming a plurality of first alignment marks in the isolation layer, wherein a pitch between adjacent two first alignment marks of the plurality of first alignment marks is different from a pitch between adjacent two through vias of the plurality of through vias;
• and
• forming a redistribution structure over the second die and the encapsulating material.