Integrated circuit package and method of forming same

A method comprising:

• forming a device layer over a first substrate;
• forming a first interconnect structure over the first substrate;
• performing a low power plasma deposition to form a first dielectric layer over the first interconnect structure;
• performing a high power plasma deposition to form a second dielectric layer over the first dielectric layer, the performing the high power plasma deposition comprising a plasma penetrating a portion of the first dielectric layer;
• and
• attaching a second substrate to the second dielectric layer, the second substrate comprising a third dielectric layer disposed over a semiconductor substrate, and attaching the second substrate to the second dielectric layer comprises physically contacting the second dielectric layer to the third dielectric layer.

A method comprising:

• forming a first semiconductor device, the first semiconductor device comprising:
• a semiconductor substrate;
• an active device along a first side of the semiconductor substrate;
• and
• an interconnect structure over the first side of the semiconductor substrate and electrically connected to the active device;
• performing a first plasma process to deposit a buffer layer over the interconnect structure, the first plasma process utilizing a first power;
• performing a second plasma process to deposit a first bonding layer over the buffer layer, the second plasma process utilizing a second power, the second power being greater than the first power;
• attaching a substrate to the first bonding layer, the attaching the substrate comprising:
• depositing a second bonding layer over the substrate;
• and
• directly bonding the second bonding layer to the first bonding layer;
• removing at least a portion of the semiconductor substrate;
• and
• forming a first conductive feature along a second side of the semiconductor substrate.