Devices incorporating stacked bonds and methods of forming the same

A packaged semiconductor device comprising:

• a first bond wire comprising a first end and a second end;
• and
• a second bond wire comprising a first end and a second end, wherein the first end of the second bond wire comprises a second bonding portion that is bonded to a surface of a first bonding portion of the first end of the first bond wire,
• wherein a thickness of the first bonding portion of the first bond wire in a vertical direction is smaller than a thickness of the second bonding portion of the second bond wire in the vertical direction.

A packaged semiconductor device comprising:

• a first bond pad;
• a second bond pad;
• a first bond wire comprising a first end bonded to the first bond pad and a second end bonded to the second bond pad;
• and
• a second bond wire comprising a first end that is electrically connected to the first bond pad and a second end that is electrically connected to the second bond pad, wherein the first end of the second bond wire is bonded to the first end of the first bond wire,
• wherein the first end of the second bond wire and the first end of the first bond wire comprise respective widths in a horizontal direction or respective thicknesses in a vertical direction that differ from one another, and
• wherein an operating frequency of the packaged semiconductor device is between 500 MHz and 75 GHz.

A packaged semiconductor device comprising:

• a first bond pad;
• a second bond pad;
• a first bond wire comprising a first end bonded to the first bond pad and a second end bonded to the second bond pad;
• and
• a second bond wire comprising a first end that is electrically connected to the first bond pad and a second end that is electrically connected to the second bond pad, wherein the first end of the second bond wire comprises a second bonding portion that is bonded to a first bonding portion of the first end of the first bond wire,
• wherein a width of the first bonding portion of the first bond wire in a horizontal direction is greater than a width of the second bonding portion of the second bond wire in the horizontal direction.