Power semiconductor module and power conversion apparatus
AssigneeMitsubishi Electric Corporation
InventorJun Fujita
Life of this patent
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Abstract
A power semiconductor module includes a circuit substrate, a power semiconductor device including a semiconductor substrate, and at least one bonding portion. The at least one bonding portion includes a first metal member distal to the semiconductor substrate, a second metal member proximal to the semiconductor substrate, and a bonding layer that bonds the first metal member and the second metal member to each other. At an identical temperature, 0.2% offset yield strength of the first metal member is smaller than the 0.2% offset yield strength of the second metal member and is smaller than shear strength of the bonding layer.
Claims9
A power semiconductor module comprising:
- a circuit substrate;
- a power semiconductor device including a semiconductor substrate;
- and
- at least one bonding portion,
- wherein
- the at least one bonding portion includes a first metal member distal to the semiconductor substrate, a second metal member proximal to the semiconductor substrate, and a bonding layer that bonds the first metal member and the second metal member to each other, and
- at an identical temperature, 0.2% offset yield strength of the first metal member is smaller than the 0.2% offset yield strength of the second metal member and is smaller than shear strength of the bonding layer.
Dependencies are inferred from the claim text.