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US 11,908,820 B2Granted
Dual solder methodologies for ultrahigh density first level interconnections
AssigneeIntel Corporation
InventorChandramouleeswaran Subramani
Life of this patent
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Abstract
An apparatus, comprising an integrated circuit (IC) package having at least one solder bond pad, a die having at least one solder bond pad, wherein the die is bonded to the IC package by at least one solder joint between the at least one solder bond pad of the die, and the at least one solder bond pad of the IC package, and an underfill material between the IC package and the die, wherein the at least one solder joint is embedded in the underfill material, and wherein the at least one solder joint comprises a first metallurgy and a second metallurgy.
Claims20
A method, comprising:
- providing, between a first bond pad of a die and a second bond pad of an integrated circuit (IC) package, a first structure comprising a first solder metallurgy and, between the first structure and one of the first bond pad or the second bond pad, a second structure comprising a second solder metallurgy;
- reflowing, prior to underfill, the first structure at a first temperature below a liquidus temperature of the second structure to form a first solder joint between the first bond pad and the second bond pad;
- forming an underfill material between the die and the IC package and adjacent the first solder joint;
- and
- reflowing, after said forming the underfill material, the first and second structures at a second temperature above the liquidus temperature of the second structure to form a second solder joint between the first bond pad and the second bond pad.
2 more elements
A method, comprising:
- providing a first structure comprising a first solder metallurgy on a first bond pad of a die;
- providing a second structure comprising a second solder metallurgy on a second bond pad of an integrated circuit (IC) package;
- contacting the first structure and the second structure;
- reflowing, prior to underfill, the first structure at a first temperature below a liquidus temperature of the second structure to form a first solder joint between the first structure and the second structure;
- forming an underfill material between the die and the IC package and adjacent the first solder joint;
- and
- reflowing, after said forming the underfill material, the first and second structures at a second temperature above the liquidus temperature of the second structure to form a second solder joint between the first bond pad and the second bond pad.
4 more elements
A method, comprising:
- providing a first structure comprising a first solder metallurgy on a first bond pad of a die;
- providing a second structure comprising a second solder metallurgy on the first structure;
- contacting the second structure to a second bond pad of an integrated circuit (IC) package;
- reflowing, prior to underfill, the second structure at a first temperature below a liquidus temperature of the first structure to form a first solder joint between the second structure and the second bond pad;
- forming an underfill material between the die and the IC package and adjacent the first solder joint;
- and
- reflowing, after said forming the underfill material, the first and second structures at a second temperature above the liquidus temperature of the first structure to form a second solder joint between the first bond pad and the second bond pad.
4 more elements
Dependencies are inferred from the claim text.