Semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate;
• a conductive pad over the semiconductor substrate;
• a conductive bump over the conductive pad;
• a conductive cap over the conductive bump, wherein a sidewall of the conductive cap is misaligned with a sidewall of the conductive bump;
• and
• a passivation layer over the semiconductor substrate and surrounding the conductive bump, wherein the sidewall of the conductive bump has a lower portion in contact with the passivation layer and an upper portion spaced apart from the passivation layer.

A semiconductor device, comprising:

• a semiconductor substrate;
• a conductive pad over the semiconductor substrate;
• a conductive bump over the conductive pad, wherein the conductive bump has a bottom portion over the conductive pad and a top portion over the bottom portion, and the top portion is wider than the bottom portion;
• a conductive cap over the top portion of the conductive bump, wherein the conductive cap has a curved top surface, and the top portion of the conductive bump has a curved top surface in contact with the conductive cap;
• and
• a passivation layer over the semiconductor substrate and surrounding the conductive bump, wherein the passivation layer has a first portion in contact with the bottom portion of the conductive bump and a second portion over the first portion and spaced apart from the conductive cap, and a top surface of the second portion of the passivation layer is lower than the curved top surface of the conductive cap.