Bonding structure of dies with dangling bonds
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsien-Wei Chen, Ming-Fa Chen, Chih-Chia Hu
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Abstract
A method includes polishing a semiconductor substrate of a first die to reveal first through-vias that extend into the semiconductor substrate, forming a dielectric layer on the semiconductor substrate, and forming a plurality of bond pads in the dielectric layer. The plurality of bond pads include active bond pads and dummy bond pads. The active bond pads are electrically coupled to the first through-vias. The first die is bonded to a second die, and both of the active bond pads and the dummy bond pads are bonded to corresponding bond pads in the second die.
Claims20
A package comprising:
- a first die comprising:
- a first semiconductor substrate;
- a first through-via penetrating through the first semiconductor substrate;
- and
- a first dielectric layer over and contacting the first semiconductor substrate;
- a second dielectric layer over the first die;
- a first active bond pad in the second dielectric layer, the first active bond pad is over and electrically coupling to the first through-via;
- a first dummy bond pad in the second dielectric layer;
- and
- a second die comprising:
- a second active bond pad over and bonded to the first active bond pad;
- and
- a dangling bond pad over and bonded to the first dummy bond pad.
A package comprising:
- a first die comprising:
- a first semiconductor substrate;
- a dielectric layer over the first semiconductor substrate;
- a first dummy bond pad over the first die and in the dielectric layer;
- and
- a second die comprising:
- a second semiconductor substrate;
- an integrated circuit at a surface of the second semiconductor substrate;
- and
- a dangling bond pad over and bonded to the first dummy bond pad, wherein the dangling bond pad and the first dummy bond pad are electrically connected to the integrated circuit.
A package comprising:
- a plurality of device dies forming a die stack, wherein each of the plurality of device dies comprises:
- a semiconductor substrate;
- a circuit at a surface of the semiconductor substrate;
- a through-via penetrating through the semiconductor substrate;
- a top surface dielectric layer;
- a dummy bond pad in the top surface dielectric layer;
- a bottom surface dielectric layer;
- and
- a dangling bond pad in the bottom surface dielectric layer, wherein each of the dangling bond pad in an upper one of the plurality of device dies is bonded to the dummy bond pad in an underlying one of the plurality of device dies, and the dummy bond pad is a terminal node of an electrical path comprising the dummy bond pad, the dangling bond pad, and the circuit.
Dependencies are inferred from the claim text.