Method for fabricating semiconductor device with graphene layers
AssigneeNanya Technology Corporation
InventorTse-Yao Huang
Life of this patent
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Abstract
The present application discloses a method for fabricating a semiconductor device with graphene layers The method includes providing a substrate; forming a first passivation layer above the substrate; forming a redistribution layer on the first passivation layer; forming a first adjustment layer on the redistribution layer; forming a pad layer on the first adjustment layer; forming a second adjustment layer between the pad layer and the first adjustment layer; forming a second passivation layer on the first passivation layer; wherein the first adjustment layer and the second adjustment layer are formed of graphene.
Claims17
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a first passivation layer above the substrate;
- forming a redistribution layer on the first passivation layer;
- forming a first adjustment layer on the redistribution layer;
- forming a pad layer on the first adjustment layer;
- forming a second adjustment layer between the pad layer and the first adjustment layer;
- and
- forming a second passivation layer on the first passivation layer;
- wherein the first adjustment layer and the second adjustment layer are formed of graphene;
- wherein forming the pad layer comprises:
- forming a lower portion on the first adjustment layer and forming an upper portion on the lower portion;
- wherein the second adjustment layer is formed between the lower portion of the pad layer and the first adjustment layer, on sidewalls of the lower portion of the pad layer, and on bottom surfaces of the upper portion of the pad layer.
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a redistribution layer above the substrate;
- forming a first adjustment layer on the redistribution layer;
- forming a second adjustment layer on the first adjustment layer;
- forming a pad layer on the second adjustment layer;
- and
- forming first spacers on sidewalls of the first adjustment layer and on sidewalls of the redistribution layer;
- wherein the first adjustment layer and the second adjustment layer are formed of graphene.
Dependencies are inferred from the claim text.