Semiconductor device package
AssigneeAdvanced Semiconductor Engineering, Inc.
InventorWen Hung Huang
Life of this patent
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Abstract
The present disclosure provides a semiconductor device package. The semiconductor device package includes an antenna layer, a first circuit layer and a second circuit layer. The antenna layer has a first coefficient of thermal expansion (CTE). The first circuit layer is disposed over the antenna layer. The first circuit layer has a second CTE. The second circuit layer is disposed over the antenna layer. The second circuit layer has a third CTE. A difference between the first CTE and the second CTE is less than a difference between the first CTE and the third CTE.
Claims20
An antenna structure, comprising:
- an antenna circuit comprising a first dielectric layer, a first antenna disposed on the first dielectric layer and a second antenna disposed on the first dielectric layer, wherein the first dielectric layer has a first dielectric constant (Dk) and the first antenna and the second antenna are configured to be operated with different frequencies;
- and
- a first circuit disposed over the antenna circuit and comprising a second dielectric layer, wherein the second dielectric layer has a second Dk greater than the first Dk of the first dielectric layer.
An antenna structure, comprising:
- an antenna layer;
- a first circuit layer;
- and
- a substrate disposed between the antenna layer and the first circuit layer, wherein the antenna layer and the first circuit layer are collectively configured to mitigate a warpage of the antenna structure.
A an antenna structure, comprising:
- an antenna circuit comprising a first dielectric layer having a first rigidity;
- a first circuit disposed over the antenna circuit and comprising a second dielectric layer having a second rigidity;
- and
- a second circuit disposed over the antenna circuit and comprising a third dielectric layer having a third rigidity;
- wherein a difference between the first rigidity and the second rigidity is less than a difference between the first rigidity and the third rigidity.
Dependencies are inferred from the claim text.