Fabricated two-sided millimeter wave antenna using through-silicon-vias

A semiconductor device assembly comprising:

• a first semiconductor substrate including:
• a first active surface and a first back surface opposite the first active surface, a first through substrate via extending from the first active surface to the first back surface, one or more metallization layers adjacent the first active surface, and
• a first portion of an antenna structure formed within one of the one or more metallization layers;
• and
• a second semiconductor substrate including:
• a second active surface and a second back surface opposite the second active surface, the second active surface facing the first back surface of the first semiconductor device,
• a second through substrate via extending from the second active surface to the second back surface, and
• a second portion of the antenna structure adjacent the second back surface,
• wherein the first portion of the antenna structure is electrically coupled to the second portion of the antenna structure by the first through substrate via and the second through substrate via.

A method comprising:

• forming a semiconductor substrate having an active surface and a back surface opposite the active surface;
• forming a through substrate via extending between the active surface and the back surface;
• forming one or more metallization layers adjacent the active surface of the semiconductor substrate;
• forming a first portion of an antenna structure within one of the one or more metallization layers;
• and
• forming a second portion of the antenna structure adjacent the back surface of the semiconductor substrate,
• wherein the through substrate via electrically couples the first portion of the antenna structure to the second portion of the antenna structure, and
• wherein the first and second portions of the antenna structure collectively define a single millimeter wave antenna.