Semiconductor device and method of fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Yu Tseng, Wei-Lun Hu
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Abstract
A semiconductor device includes a substrate, a first metal layer, a dielectric layer, and a second metal layer. The substrate includes a dense region and an isolation region. The first metal layer is disposed over the substrate and includes a first metal pattern and a second metal pattern. The first metal pattern is located in the dense region. There is at least one slot in the first metal pattern. The second metal pattern is located in the isolation region. The dielectric layer is disposed on the first metal layer. The second metal layer is disposed on the dielectric layer.
Claims20
A semiconductor device, comprising:
- a substrate comprising a dense region and an isolation region;
- a first metal layer disposed over the substrate and comprising:
- a plurality of first metal patterns located in the dense region, wherein the first metal patterns are separated from each other, and at least one of the first metal patterns includes at least one dielectric portion therein;
- and
- a second metal pattern located in the isolation region;
- a dielectric layer disposed on the first metal layer;
- and
- a second metal layer disposed on the dielectric layer, comprising:
- a third metal pattern located in the dense region;
- and
- a fourth metal pattern located in the isolation region, wherein a thickness of the third metal pattern is less than a thickness of the fourth metal pattern.
A semiconductor device, comprising:
- a substrate comprising a dense region and an isolation region;
- a first metal layer disposed over the substrate and comprising:
- a plurality of first metal patterns located in the dense region, wherein the first metal patterns are separated from each other;
- and
- at least one second metal pattern located in the isolation region;
- a dielectric layer disposed on the first metal layer, wherein the dielectric layer has a first top surface in the dense region and a second top surface in the isolation region, and the first top surface is higher than the second top surface, and a portion of the dielectric layer is disposed in at least one of the first metal patterns;
- and
- a second metal layer disposed on the dielectric layer and comprising:
- a third metal pattern located on the first top surface;
- and
- a fourth metal pattern located on the second top surface, wherein a top surface of the third metal pattern is substantially flush with a top surface of the fourth metal pattern, and the second metal layer is in direct contact with the dielectric layer.
A method of fabricating a semiconductor device, comprising:
- providing a substrate, wherein the substrate comprising a dense region and an isolation region;
- forming a first metal layer over the substrate, wherein the first metal layer comprises:
- a plurality of first metal patterns located in the dense region, wherein the first metal patterns are separated from each other, and at least one of the first metal patterns comprises at least one slot;
- and
- a second metal pattern located in the isolation region;
- forming a dielectric layer on the first metal layer, to fill the at least one slot, such that the at least one of the first metal patterns comprises at least one dielectric portion therein;
- and
- forming a second metal layer on the dielectric layer, the second metal layer comprising:
- a third metal pattern located in the dense region;
- and
- a fourth metal pattern located in the isolation region, wherein a thickness of the third metal pattern is less than a thickness of the fourth metal pattern.
Dependencies are inferred from the claim text.