Package structures and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, An-Jhih Su
Life of this patent
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Abstract
An embodiment is a method including forming a first package. The forming the first package includes forming a through via adjacent a first die, at least laterally encapsulating the first die and the through via with an encapsulant, and forming a first redistribution structure over the first die, the through via, and the encapsulant. The forming the first redistribution structure including forming a first via on the through via, and forming a first metallization pattern on the first via, at least one sidewall of the first metallization pattern directly overlying the through via.
Claims20
A structure comprising:
- a first integrated circuit die, the first integrated circuit die comprising active devices;
- a second integrated circuit die over the first integrated circuit die, the second integrated circuit die comprising active devices and a front side and a backside, the front side of the second integrated circuit die having die connectors, the backside of the second integrated circuit die being free from die connectors, the backside of the second integrated circuit die being coupled to and facing a front side of the first integrated circuit die;
- an encapsulant laterally surrounding the second integrated circuit die;
- a first conductive via extending through the encapsulant, the first conductive via being electrically coupled to the first integrated circuit die, the first conductive via comprising:
- a first portion over the first integrated circuit die, the first portion having a first width, the first width being measured in a first direction, the first direction being parallel to a major surface of the first integrated circuit die;
- and
- a second portion over the first portion, the second portion having a second width, the second width being measured in the first direction, the second width being less than the first width.
A structure comprising:
- a first via and a second via over and electrically coupled to a first die;
- a second die over the first die, a front side of the second die facing away from the first die;
- a first encapsulant encapsulating the first die, the second die, the first via, and the second via;
- a first redistribution structure over the first die, the second die, the first via, the second via, and the first encapsulant, the first redistribution structure comprising:
- a third via on the first via;
- a fourth via on the second via;
- a first metallization pattern on the third via, a first sidewall of the first metallization pattern directly overlying the first via;
- and
- a second metallization pattern on the fourth via, a second sidewall of the second metallization pattern directly overlying the second via, wherein the first die is electrically coupled to the second die through the first via and at least a portion of the first redistribution structure.
A structure comprising:
- a first through via over and electrically coupled to a first die;
- a second die over the first die;
- an encapsulant on sidewalls of the first die, the second die, and the first through via;
- a first redistribution structure over the second die, the first through via, and the encapsulant, the first redistribution structure comprising:
- a dielectric layer over the second die, the first through via, and the encapsulant;
- a first via in the dielectric layer and on the first through via;
- and
- a first metallization pattern on the first via, a sidewall of the first metallization pattern directly overlying the first through via,
- wherein the first die is electrically coupled to the second die through the first through via and at least a portion of the first redistribution structure.
Dependencies are inferred from the claim text.