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US 11,908,793 B2Granted
Stripped redistrubution-layer fabrication for package-top embedded multi-die interconnect bridge
AssigneeIntel Corporation
InventorsJiun Hann Sir, Poh Boon Khoo, Eng Huat Goh, Amruthavalli Pallavi Alur, Debendra Mallik
Life of this patent
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Abstract
An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.
Claims22
An integrated-circuit device package, comprising:
- an interconnect bridge in a dielectric layer, the interconnect bridge comprising traces, and the interconnect bridge having a top side and a bottom side opposite the top side, a first side between the top side and the bottom side, and a second side between the top side and the bottom side;
- a first via and a second via in the dielectric layer, the first via and the second via laterally adjacent to the first side of the interconnect bridge;
- a third via and a fourth via in the dielectric layer, the third via and the fourth via laterally adjacent to the second side of the interconnect bridge;
- a first integrated circuit chip coupled to the top side of the interconnect bridge, the first integrated circuit chip electrically coupled to the first via and the second via;
- a second integrated circuit chip having a top side and a bottom side, the bottom side of the second integrated circuit chip coupled to the top side of the interconnect bridge, the second integrated circuit chip electrically coupled to the third via and the fourth via;
- a third integrated circuit chip coupled to the top side of the second integrated circuit chip;
- and
- a plurality of bumps beneath interconnect bridge, the plurality of bumps within a footprint of the first side and the second side of the interconnect bridge.
5 more elements
An integrated-circuit device package, comprising:
- a silicon bridge in a dielectric layer, the silicon bridge comprising traces, and the silicon bridge having a top side and a bottom side opposite the top side, a first side between the top side and the bottom side, and a second side between the top side and the bottom side;
- a first via in the dielectric layer, the first via laterally adjacent to the first side of the silicon bridge;
- a second via in the dielectric layer, the second via laterally adjacent to the second side of the silicon bridge;
- a first integrated circuit chip coupled to the top side of the silicon bridge, the first integrated circuit chip electrically coupled to the first via;
- a second integrated circuit chip having a top side and a bottom side, the bottom side of the second integrated circuit chip coupled to the top side of the silicon bridge, the second integrated circuit chip electrically coupled to the second via;
- a third integrated circuit chip coupled to the top side of the second integrated circuit chip;
- and
- a plurality of bumps beneath silicon bridge, the plurality of bumps within a footprint of the first side and the second side of the silicon bridge.
5 more elements
Dependencies are inferred from the claim text.