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US 11,908,792 B2Granted
Semiconductor device comprising cap layer over dielectric layer and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShao-Kuan Lee, Hai-Ching Chen, Hsin-Yen Huang, Shau-Lin Shue, Cheng-Chin Lee
Life of this patent
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Abstract
A semiconductor device includes a first conductive feature, a second conductive feature, and a first dielectric layer positioned between the first conductive feature and the second conductive feature. An etch stop layer is over the first dielectric layer. A cap layer is over the first conductive feature, the second conductive feature, and the etch stop layer.
Claims20
A semiconductor device, comprising:
- a first conductive feature;
- a second conductive feature;
- a first dielectric layer positioned between the first conductive feature and the second conductive feature;
- an etch stop layer over the first dielectric layer;
- a cap layer over the first conductive feature, the second conductive feature, and the etch stop layer, wherein the cap layer is adjacent a first sidewall of the etch stop layer and in direct contact with the first conductive feature;
- and
- a contact overlying a portion of the first dielectric layer positioned between the first conductive feature and the second conductive feature, wherein:
- the contact is separated from the portion of the first dielectric layer by the etch stop layer, and
- the contact is in direct contact with a top surface of the etch stop layer and electrically coupled to the second conductive feature.
6 more elements
A semiconductor device, comprising:
- a first conductive feature;
- a second conductive feature;
- a first dielectric layer positioned between the first conductive feature and the second conductive feature;
- an etch stop layer over the first dielectric layer;
- a cap layer over the first conductive feature, the second conductive feature, and the etch stop layer, wherein the cap layer is adjacent a first sidewall of the etch stop layer and extends from a bottommost surface of the etch stop layer to a topmost surface of the etch stop layer along the first sidewall of the etch stop layer;
- and
- a contact overlying a portion of the first dielectric layer positioned between the first conductive feature and the second conductive feature, wherein:
- the contact is separated from the portion of the first dielectric layer by the etch stop layer, and
- the contact is in direct contact with a sidewall of the cap layer.
6 more elements
A semiconductor device, comprising:
- a first conductive feature;
- a second conductive feature;
- a first dielectric layer positioned between the first conductive feature and the second conductive feature;
- a cap layer over the first conductive feature, the second conductive feature, and the first dielectric layer, wherein the cap layer directly contacts the second conductive feature;
- and
- a contact overlying a portion of the first dielectric layer positioned between the first conductive feature and the second conductive feature, wherein:
- the contact contacts a sidewall of the cap layer, and
- the contact is electrically coupled to the second conductive feature.
5 more elements
Dependencies are inferred from the claim text.