Semiconductor device with metal die attach to substrate with multi-size cavity

A method of semiconductor die attachment, comprising:

• providing at least one metal substrate including a top cavity portion that is sized with area dimensions to receive a semiconductor die having a top side with bond pads thereon and a back side with a metal (BSM) layer thereon;
• forming a through-hole aperture including a multi-size cavity by removing metal from an area portion of the top cavity portion and from a bottom cavity portion to form a first ring around the bottom cavity portion;
• inserting the semiconductor die top side up to place the BSM layer on the first ring, and
• immersing at least the BSM layer of the semiconductor die and a bottom side of the metal substrate into a plating container that provides an electroplating bath including an electroplating solution to plate a metal die attach layer that directly contacts at least a portion of the BSM layer, sidewalls of the bottom cavity portion, and a bottom side of the metal substrate.