Back to results
US 11,908,767 B2Granted
Semiconductor package structure
AssigneeMediatek Inc.
InventorsChe-Hung Kuo, Hsing-Chih Liu, Chia-Hao Hsu
Life of this patent
Estimating the term…
Abstract
A semiconductor package structure includes a first redistribution layer, a semiconductor die, a thermal spreader, and a molding material. The semiconductor die is disposed over the first redistribution layer. The thermal spreader is disposed over the semiconductor die. The molding material surrounds the semiconductor die and the thermal spreader.
Claims18
A semiconductor package structure, comprising:
- a first redistribution layer;
- a semiconductor die disposed directly over the first redistribution layer;
- a thermal spreader disposed directly over the semiconductor die;
- a second redistribution layer disposed directly over the thermal spreader, wherein the thermal spreader is bonded onto the semiconductor die through a first adhesion layer and bonded onto the second redistribution layer through a second adhesion layer;
- and
- a molding material in contact with the semiconductor die the thermal spreader, the first redistribution layer, the second first redistribution layer, the first adhesion layer, and the second adhesion layer.
3 more elements
A semiconductor package structure, comprising:
- a substrate having a wiring structure;
- a semiconductor die disposed directly over the substrate and electrically coupled to the wiring structure;
- a thermal spreader disposed directly over the semiconductor die;
- an interposer disposed directly over the thermal spreader;
- and
- a molding material in contact with the substrate, the semiconductor die, and the thermal spreader.
3 more elements
A semiconductor package structure, comprising:
- a first substrate having a wiring structure;
- a first redistribution layer disposed directly over the first substrate;
- a semiconductor die disposed directly over the first redistribution layer and electrically coupled to the wiring structure;
- and
- a first thermal spreader bonded onto the first substrate via a first thermal interface material and thermally coupled to the semiconductor die, wherein the first thermal interface material and the semiconductor die are disposed on opposite sides of the first thermal spreader, and the first thermal spreader is disposed between the first redistribution layer and the first substrate.
2 more elements
Dependencies are inferred from the claim text.