Semiconductor structure with heating element

A structure, comprising:

• an insulating layer disposed on a substrate;
• a semiconductor device located on the insulating layer;
• an intrinsic semiconductor area surrounding the semiconductor device;
• at least one heating element surrounding the intrinsic semiconductor area, wherein the at least one heating element is a heavily doped region of a first conductivity type, and the intrinsic semiconductor area is sandwiched between the at least one heating element and the semiconductor device, and a distance between the at least one heating element and a boundary surface of the semiconductor device is smaller than half of a maximum width of the semiconductor device;
• a plurality of heating pads joined with the at least one heating element;
• and
• a voltage supplier connected to the plurality of heating pads, wherein the voltage supplier controls a temperature of the plurality of heating pads.

A structure, comprising:

• a semiconductive material layer comprising an intrinsic semiconductor area and a semiconductor device located within an area surrounded by the intrinsic semiconductor area;
• a heating element surrounding the intrinsic semiconductor area;
• a first heating pad joined with the heating element, and located on a first side of the semiconductor device;
• a second heating pad joined with the heating element, and located on a second side of the semiconductor device, wherein the second side is opposite to the first side;
• and
• a third heating pad joined with the heating element, and located on a third side of the semiconductor device, wherein the third side is adjacent to the first side.