Transistor isolation regions and methods of forming the same

A method comprising:

• etching a first trench and a second trench in a substrate, the first trench having a first width, the second trench having a second width, the second width greater than the first width;
• depositing a flowable material in the first trench and the second trench;
• converting the flowable material to a solid insulation material, the solid insulation material filling the first trench, the solid insulation material lining the second trench;
• forming a hybrid fin on the solid insulation material in the second trench, the hybrid fin filling portions of the second trench that are unfilled by the solid insulation material;
• and
• recessing the solid insulation material to form a first isolation region in the first trench and to form a second isolation region in the second trench, the hybrid fin protruding above the second isolation region.

A method comprising:

• etching a first trench and a second trench in a substrate, the first trench having a first width, the second trench having a second width, the second width greater than the first width;
• depositing a liner material in the first trench and the second trench with an atomic layer deposition process;
• depositing a flowable material on the liner material and in the first trench and the second trench with a contouring flowable chemical vapor deposition process;
• converting the liner material and the flowable material to a solid insulation material, the solid insulation material filling the first trench, the solid insulation material lining the second trench, a portion of the second trench remaining unfilled by the solid insulation material;
• forming a hybrid fin in the portion of the second trench unfilled by the solid insulation material;
• and
• recessing the solid insulation material to form a first isolation region in the first trench and to form a second isolation region in the second trench, the hybrid fin protruding above the second isolation region.