Semiconductor device structure

A semiconductor device structure, comprising:

• a substrate;
• a fin structure protruding from the substrate and having a first longitudinal axis along a first direction;
• a gate stack formed across the fin structure along a second direction different from the first direction;
• a source/drain structure attached to the fin structure;
• a contact structure formed over the source/drain structure and having a second longitudinal axis along the second direction;
• and
• a dielectric structure formed through the contact structure and having a top surface and a bottom surface, wherein the dielectric structure has a first dimension at the top surface along the second direction and a second dimension at the bottom surface along the second direction, and the first dimension is greater than the second dimension, and the bottom surface of the dielectric structure is no lower than a bottom surface of the contact structure.

A semiconductor device structure, comprising:

• a fin structure protruding from a substrate and extending along a first direction;
• a gate stack formed over the substrate and extending along a second direction different from the first direction;
• a dielectric structure spaced apart from the gate stack along the second direction, wherein the dielectric structure has a slope sidewall surface;
• source/drain structures formed at opposite sides of the gate stack along the first direction;
• a contact structure formed over the source/drain structures and extending along and in contact with a lower portion of the slope sidewall surface of the dielectric structure;
• and
• a first cap layer vertically overlapping the contact structure and extending along and in contact with an upper portion of the slope sidewall surface of the dielectric structure.