Planar devices with consistent base dielectric

A semiconductor device, comprising:

• a dielectric layer directly on a top surface of a substrate, the dielectric layer having a consistent thickness across the top surface and including a high-k dielectric;
• a conductive layer on the dielectric layer that includes a work function metal;
• a first dielectric fin on the substrate;
• and
• a plurality of semiconductor layers, vertically stacked above the dielectric layer, supported by the first dielectric fin.

An integrated chip, comprising:

• a transistor device, comprising:
• a body isolation layer on a substrate;
• a nanosheet channel over the body isolation layer;
• a gate conductor;
• and
• a gate dielectric material between the gate conductor and the body isolation layer;
• and
• a planar device, comprising:
• a gate dielectric material directly on a top surface of the substrate, the gate dielectric material having a consistent thickness across the top surface;
• a conductive layer on the dielectric layer;
• a first dielectric fin on the substrate;
• and
• a semiconductor layer supported by the first dielectric fin.