Interconnect including integrally formed capacitor
AssigneeInternational Business Machines Corporation
InventorsNicholas Anthony Lanzillo, Chih-Chao Yang
Life of this patent
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Abstract
A method of making a semiconductor component includes depositing a first metal material onto a structure having a first cavity and a second cavity such that the first metal material fills the first cavity and forms a first lining on exposed surfaces of the second cavity. The method further includes depositing a dielectric material onto the structure such that the dielectric material forms a second lining on exposed surfaces of the first lining. The method further includes depositing a second metal material onto the structure such that the second metal material fills remaining volume in the second cavity.
Claims20
A method of making a semiconductor component, the method comprising:
- depositing a first metal material onto a structure having a first cavity and a second cavity such that the first metal material fills the first cavity and forms a first lining on exposed surfaces of the second cavity;
- depositing a dielectric material onto the structure such that the dielectric material forms a second lining on exposed surfaces of the first lining, such that the second lining has a first thickness on substantially horizontal exposed surfaces of the first lining and a second thickness on non-substantially horizontal exposed surfaces of the first lining, and such that the first thickness is different than the second thickness;
- and
- depositing a second metal material onto the structure such that the second metal material fills remaining volume in the second cavity.
A semiconductor component, comprising:
- a dielectric material including a first cavity and a second cavity;
- a first metal material in direct contact with the dielectric material such that the first metal material fills the first cavity and such that the first metal material forms a first lining in the second cavity;
- a further dielectric material in direct contact with the first metal material such that the further dielectric material forms a second lining in the second cavity, the second lining having a first thickness on substantially horizontal exposed surfaces of the first lining and a second thickness on non-substantially horizontal exposed surfaces of the first lining, the first thickness being different than the second thickness;
- and
- a second metal material in direct contact with the further dielectric material such that the second metal material fills the second cavity.
A semiconductor component, comprising:
- a dielectric material having a first cavity and a second cavity, wherein:
- the first cavity is filled with a first metal material,
- the second cavity is lined with the first metal material, further lined with a further dielectric material, and filled with a second metal material such that the first metal material, further dielectric material, and second metal material form a capacitor in the second cavity, and
- the further dielectric material has a first thickness on substantially horizontal exposed surfaces of the first metal material and a second thickness on non-substantially horizontal exposed surfaces of the first metal material, the first thickness different than the second thickness.
Dependencies are inferred from the claim text.