Method of manufacturing semiconductor device, substrate processing apparatus and recording medium

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising:

• (a) forming a first metal film to fill completely a concave portion in a surface of a substrate by supplying a plurality of times a first metal-containing gas and a first reducing gas without being mixed with each other or by simultaneously supplying the first metal-containing gas and the first reducing gas, to the substrate having the concave portion;
• (b) forming a second metal film on the first metal film by supplying a plurality of times at least a second metal-containing gas and a second reducing gas without being mixed with each other or by simultaneously supplying at least the second metal-containing gas and the second reducing gas;
• and
• (c) etching an upper portion of the first metal film and the second metal film by supplying an etching gas to the substrate,
• wherein in (a), a thickness of the first metal film before performing (c) is 1.2 times or less of a thickness of the first metal film remaining after performing (c), and
• wherein (c) is performed after (a) and (b).

A substrate processing apparatus, comprising:

• a process chamber in which a substrate, which has a concave portion in a surface of the substrate, is processed;
• a gas supply system configured to supply a first metal-containing gas, a second metal-containing gas, a first reducing gas, a second reducing gas, and an etching gas, to the substrate in the process chamber;
• and
• a controller configured to control the gas supply system so as to perform, in the process chamber:
• (a) forming a first metal film to fill completely the concave portion by supplying a plurality of times the first metal-containing gas and the first reducing gas without being mixed with each other or by simultaneously supplying the first metal-containing gas and the first reducing gas, to the substrate;
• (b) forming a second metal film on the first metal film by supplying a plurality of times at least the second metal-containing gas and the second reducing gas without being mixed with each other or by simultaneously supplying at least the second metal-containing gas and the second reducing gas, to the substrate;
• and
• (c) etching an upper portion of the first metal film and the second metal film by supplying the etching gas to the substrate,
• wherein in (a), a thickness of the first metal film before performing (c) is 1.2 times or less of a thickness of the first metal film remaining after performing (c), and
• wherein (c) is performed after (a) and (b).