Substrate processing method and device manufactured by using the same
AssigneeASM IP Holding B.V.
InventorYoon Ki Min
Life of this patent
Estimating the term…
Abstract
Provided are a substrate processing method and a device manufactured by using the same, which may improve etch selectivity of an insulating layer deposited on a stepped structure. The substrate processing method includes: forming a first layer on a stepped structure having an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface; weakening at least a portion of the first layer; forming a second layer on the first layer; and performing an isotropic etching process on the first layer and the second layer.
Claims19
A semiconductor device comprising:
- a substrate;
- at least one memory cell string extending to protrude on the substrate;
- a first word line connected to a first memory cell among the at least one memory cell string;
- and
- a second word line connected to a second memory cell among the at least one memory cell string,
- wherein at least one of the first word line and the second word line comprises:
- a word line conductive layer extending toward a channel;
- a first conductive layer on the word line conductive layer;
- and
- a second conductive layer on the first conductive layer,
- wherein the first conductive layer comprises a surface region and an inner region under the surface region,
- the first conductive layer comprises an upper recess in the surface region and a lower recess in the inner region, and
- an extension length of the upper recess is different from an extension length of the lower recess.
A semiconductor device comprising:
- a substrate;
- at least one memory cell string extending to protrude on the substrate;
- a first word line connected to a first memory cell among the at least one memory cell string;
- and
- a second word line connected to a second memory cell among the at least one memory cell string,
- wherein at least one of the first word line and the second word line comprises:
- a word line conductive layer extending toward a channel;
- a first conductive layer on the word line conductive layer;
- and
- a second conductive layer on the first conductive layer,
- an extension length of a first recess of the first conductive layer is different from an extension length of a second recess of the second conductive layer.
A semiconductor device comprising:
- a substrate;
- at least one memory cell string extending to protrude on the substrate;
- a first word line connected to a first memory cell among the at least one memory cell string;
- and
- a second word line connected to a second memory cell among the at least one memory cell string,
- wherein at least one of the first word line and the second word line comprises:
- a word line conductive layer extending toward a channel;
- and
- a first conductive layer on the word line conductive layer,
- wherein the first conductive layer comprises a surface region and an inner region under the surface region,
- the first conductive layer comprises an upper recess in the surface region and a lower recess in the inner region, and
- an extension length of the upper recess is different from an extension length of the lower recess.
Dependencies are inferred from the claim text.