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US 11,908,718 B2Granted
In-situ metrology and process control
AssigneeApplied Materials, Inc.
InventorsRamesh Krishnamurthy, Lakshmanan Karuppiah
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Abstract
Methods and apparatus for the in-situ measurement of metrology parameters are disclosed herein. Some embodiments of the disclosure further provide for the real-time adjustment of process parameters based on the measure metrology parameters. Some embodiments of the disclosure provide for a multi-stage processing chamber top plate with one or more sensors between process stations.
Claims11
A method for measuring a substrate, the method comprising:
- processing the substrate within a first process station of a multi-station processing chamber;
- moving the substrate to a second process station of the multi-station processing chamber;
- and
- measuring the substrate during movement between the first process station and the second process station,
- wherein the multi-station processing chamber comprises at least the first process station and the second process station, and wherein the substrate is processed within the first process station, moved to the second process station, and measured in-situ while maintaining vacuum within the multi-station processing chamber.
2 more elements
Dependencies are inferred from the claim text.