US 11,908,716 B2Granted

Image-based in-situ process monitoring

AssigneeApplied Materials, Inc.

InventorsGuoheng Zhao, Venkatakaushik Voleti, Todd Egan, Kyle R. Tantiwong, Andreas Schulze, Niranjan Ramchandra Khasgiwale, Mehdi Vaez-Iravani

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Abstract

Methods and systems for monitoring etch or deposition processes using image-based in-situ process monitoring techniques include illuminating a measurement area on a sample disposed in a process chamber. The measurement area is illuminated using an input beam generated remote from the process chamber and transmitted to a first viewing window of the process chamber by a first optical fiber. Portions of the first input beam reflected from the measurement area are transmitted from the first viewing window to an imaging sensor by a second optical fiber. A sequence of images is obtained at the imaging sensor, and a change in reflectance of pixels within each of the images is determined. The etch or deposition process is monitored based on the change in reflectance.

Claims14

Dependent claims

A method for monitoring an etch or deposition process using image-based in-situ process monitoring, the method comprising:

illuminating a measurement area on a sample disposed in a process chamber using a first input beam of electromagnetic radiation having a first peak wavelength, the first input beam generated remote from the process chamber and transmitted to at least part of an objective lens system by a first optical fiber, the objective lens system being telecentric, broadband, diffraction limited, and spectrally parfocalized, and the objective lens system disposed adjacent to a first viewing window of the process chamber, the first viewing window disposed on a lid or side of the process chamber and being transparent to allow viewing of the sample during processing;
receiving portions of the first input beam reflected from the measurement area at an imaging sensor, the imaging sensor configured to capture images of the measurement area on the sample, the portions of the first input beam reflected from the measurement area received as a first reflected beam, the first reflected beam transmitted from the objective lens system to the imaging sensor by a second optical fiber;
obtaining a sequence of first images of the measurement area using the first reflected beam received at the imaging sensor, each of the first images obtained at a different time within a monitoring period, and each of the first images comprising first pixels corresponding to different parts of the measurement area;
determining a first reflectance of one or more of the first pixels within each of the first images, the one or more of the first pixels corresponding to areas of interest within the measurement area;
determining a first change in the reflectance of the one or more of the first pixels between adjacent first images in the sequence;
and
monitoring the etch or deposition process based on the first change in the reflectance.

4 more elements

A processing system comprising:

a processing chamber having a viewing window disposed in a lid or side thereof, the viewing window being transparent to allow viewing of a sample during processing;
an imaging system comprising:
an illuminator source configured to generate electromagnetic radiation to illuminate a measurement area on the sample;
an imaging sensor configured to capture images of the measurement area on the sample;
an objective lens system disposed adjacent to the viewing window, wherein the objective lens system is telecentric, broadband, diffraction limited, and spectrally parfocalized;
a first optical fiber configured to transmit the electromagnetic radiation from the illumination source to at least part of the objective lens system for illumination of the measurement area on the sample;
a second optical fiber configured to transmit the images from the objective lens system to the imaging sensor;
and
a controller configured to monitor an etch or deposition by performing steps comprising:
illuminating the measurement area on a sample using an input beam generated by the illumination source and transmitted to the objective lens system by the first optical fiber;
receiving portions of the input beam reflected from the measurement area at the imaging sensor as a reflected beam, the reflected beam transmitted from the objective lens system to the imaging sensor by the second optical fiber;
obtaining the images of the measurement area using the reflected beam received at the imaging sensor, each of the images obtained at a different time within a monitoring period, and each of the images comprising pixels corresponding to different parts of the measurement area;
determining a reflectance of one or more of the pixels within each of the images, the one or more of the pixels corresponding to areas of interest within the measurement area;
determining a change in the reflectance of the one or more of the pixels between adjacent ones of the images;
and
monitoring the etch or deposition process based on the change in the reflectance.

13 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/321,366Filed 14 May 2021
Published: US 2022/0367217 A117 Nov 2022
Granted: 20 Feb 2024
Term ends: Not estimatedThe source records don’t support an estimate.

Classification17 codes

H10P 72/0432
Apparatus for thermal treatment: mainly by conduction
H10P 72/0604
Apparatus for monitoring, sorting, marking, testing or measuring: process monitoring, e.g. flow or thickness monitoring
C23C 16/52
Characterised by the method of coating: controlling or regulating the coating process
G01N 21/55
Systems in which incident light is modified in accordance with the properties of the material investigated: specular reflectivity

Family

US 2022/0367217 A1Pre-grant publication · published 17 Nov 2022
US 11,908,716 B2This patent

From the US filing history. Foreign family members aren’t listed.

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