Semiconductor substrate treatment system

A semiconductor substrate treatment system, comprising:

• a chamber having an internal space defined by a first surface of the chamber, a second surface of the chamber thereabove and opposing the first surface, and a third surface of the chamber connected to the first surface and the second surface;
• a transfer device in a central region of the internal space, the transfer device including an arm, the transfer device configured to transfer a semiconductor substrate;
• an ionizing device including a plurality of discharge devices that each include an electrode,
• the plurality of discharge devices including a first discharge device, a second discharge device, and a third discharge device,
• the first discharge device and the second discharge device on the second surface and configured to emit ions having a first polarity and a second polarity, respectively,
• the second polarity being opposite to the first polarity,
• the ionizing device configured to charge particles in the internal space with the first polarity and the second polarity,
• the third discharge device above the transfer device and configured to emit the ions having the first and second polarities together to neutralize a charge generated on a surface of the transfer device;
• and
• a first dust collecting assembly and a second dust collecting assembly on the third surface and facing each other,
• the first dust collecting assembly and the second dust collecting assembly being configured to collect charged particles by generating electric fields having different polarities,
• the first dust collecting assembly and the second dust collecting assembly being adjacent to the first discharge device and the second discharge device, respectively, and
• the first dust collecting assembly and the second dust collecting assembly having the second polarity and the first polarity, respectively, wherein
• the first dust collecting assembly and the second dust collecting assembly include a particle collecting layer configured to have the charged particles attach thereto, and
• the arm moves within an area corresponding to a lower portion of the third discharge device.