Patterning method and manufacturing method of semiconductor device

A patterning method, comprising:

• providing a substrate;
• providing a first material layer on the substrate;
• providing a second material layer over the first material layer, wherein the second material layer has a first opening partially exposing the first material layer;
• depositing a blocking layer in the first opening;
• forming a passivation layer in the first opening, wherein the passivation layer covers a top surface of the second material layer, a top surface of the blocking layer, and sidewalls of the first opening;
• performing a first etching process to remove a portion of the blocking layer and a portion of the first material layer to form a second opening exposing the substrate;
• and
• performing a second etching process to remove the passivation layer.

A manufacturing method of a semiconductor device, comprising:

• providing a substrate;
• forming a metal-oxide-semiconductor (MOS) transistor over the substrate;
• forming an etch stop layer over the MOS transistor;
• depositing a dielectric layer over the etch stop layer;
• forming a first opening in the dielectric layer to expose the etch stop layer;
• selectively forming a passivation layer on the dielectric layer to cover a top surface of the dielectric layer and sidewalls of the first opening, wherein a portion of the exposed etch stop layer is uncovered by the passivation layer;
• performing a first etching process to remove the portion of the exposed etch stop layer that is uncovered by the passivation layer to form a second opening in the etch stop layer;
• performing a second etching process to remove the passivation layer;
• and
• filling a conductive material into the first opening and the second opening to form a conductive contact.