Multi-layered semiconductive device and methodology with polymer and transition metal dichalcogenide material

A method for manufacturing a semiconductor device, the method comprising:

• forming a first layer having TMD (transition metal dichalcogenide) material and being characterized at least in part by a transparency metric;
• integrating a plurality of electrodes with the first layer;
• and
• applying a second layer to cover the first layer and the plurality of electrodes, wherein the second layer includes a polymer, is integrated with the TMD material and the first layer and provides a flexible substrate, and the semiconductor device is an optical electronic device adapted to pass or manipulate light, and the transparency metric is limited by a transparency characteristic that is associated with at least one of the TMD material and the second layer.

An apparatus including a semiconductor device, the apparatus comprising:

• a surface having thereon a first layer including TMD (transition metal dichalcogenide) material and being characterized at least in part by a transparency metric that is limited by a transparency characteristic associated with at least one of the TMD material and a second layer which includes polymer;
• a plurality of electrodes formed on or as part of the first layer;
• and
• the second layer being over the first layer and the plurality of electrodes, and being integrated with the TMD material and the first layer and providing a flexible substrate.