Method for fabricating GaN chip and GaN chip

Abstract

The present application discloses a method, a system, a device, and a storage medium for fabricating a GaN chip. The method includes: growing a Nb2N sacrificial layer on an original substrate, and growing a GaN insertion layer on the Nb2N sacrificial layer; growing a Ta2N sacrificial layer on the GaN insertion layer, and growing a semiconductor layer on the Ta2N sacrificial layer to form a GaN wafer; bonding the GaN wafer with a first surface of a temporary carrier, and removing the Nb2N sacrificial layer and the Ta2N sacrificial layer; and transferring remaining material after removal of the Nb2N sacrificial layer and the Ta2N sacrificial layer to a target substrate, and removing the temporary carrier from the remaining material to form the GaN chip.

Dependencies are inferred from the claim text.